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?004 fairchild semiconductor corporation a ugust 2004 RMPA2550 rev. d RMPA2550 RMPA2550 2.4?.5 ghz and 5.15?.85 ghz dual band ingap hbt linear power amplifier general description the RMPA2550 is a dual frequency band power amplifier designed for high performance wlan applications in the 2.4-2.5 ghz and the 5.15-5.85 ghz frequency bands. the single low profile 20 pin 3 x 4 x 0.9 mm package with internal matching on both input and output to 50 ? minimizes next level pcb space and allows for simplified integration. the two on-chip detectors provide power sensing capability while the logic control provides power saving shutdown options. the pa? low power consumption and excellent linearity are achieved using our ingap heterojunction bipolar transistor (hbt) technology. features dual band operation in a single package design 26 db modulated gain 2.4 to 2.5 ghz band 27 db modulated gain 5.15 to 5.85 ghz band 26 dbm output power @ 1 db compression both frequency bands 2.0% evm at 18 dbm modulated pout, 2.45 ghz 2.3% evm at 18 dbm modulated pout, 5.45 ghz 3.3 v single positive supply operation adjustable bias current operation two power saving shutdown options (bias and logic control) separate integrated power detectors with 20 db dynamic range low profile 20 pin, 3 x 4 x 0.9 mm standard qfn leadless package internally matched to 50 ohms optimized for use in 802.11a/b/g applications device electrical characteristics 1,3 802.11g/a ofdm modulation (with 176 ? burst time, 100? idle time) 54mbps data rate, 16.7 mhz bandwidth electrical characteristics 3,6 802.11b cck modulation (rf not framed) 11mbps data rate, 22.0 mhz bandwidth notes: 1: vc1 2.4 ,vc2 2.4, vm 2.4, vc1 5.0, vc2 5.0, vc3 5.0, vm13 5.0, vm2 5.0 = 3.3 volts, t=25?, pa is constantly biased, 50 ? system. vl adjusted for either 2.4 or 5 ghz operation. 2: percentage includes system noise floor of evm=0.8%. 3: not measured 100% in production. 4: p out measured at p in corresponding to power detection threshold. 5: measured at p in at which spectral mask compliance is satisfied. two-sample windowing length applied. 6: vc1 2.4, vc2 2.4, vm 2.4 = 3.3 volts, t=25?, p out =+23 dbm, 50 ? system. satisfies spectral mask. 7: p in is adjusted to point where performance approaches spectral mask requirements. p arameter minimum typical maximum minimum typical maximum unit f requency 2.4 2.5 5.15 5.85 ghz supply voltage 3.0 3.3 3.6 3.0 3.3 3.6 v gain 24.5 26 28 25.5 27 29 db t otal current @ 18dbm p out 150 182 228 260 ma t otal current @ 19dbm p out 157 189 235 267 ma evm @ 18dbm p out 2 2.0 2.5 2.5 3.5 % evm @ 19dbm p out 2 3.0 3.5 3.5 4.5 % detector output @ 19dbm p out 508 600 780 865 mv detector threshold 4 5.0 7.0 5.0 7.0 dbm p out spectral mask compliance 5,7 21.0 21.0 dbm p arameter minimum typical maximum unit f requency 2.4 2.5 ghz supply voltage 3.0 3.3 3.6 v gain 24.5 26 28 db t otal current 250 ma first sidelobe power -40 dbc second sidelobe power -55 dbc max p out spectral mask compliance 7 24.0 dbm
?004 fairchild semiconductor corporation RMPA2550 rev. d RMPA2550 electrical characteristics 1 single tone notes: 1: vc1 2.4 ,vc2 2.4, vm 2.4, vc1 5.0, vc2 5.0, vc3 5.0, vm13 5.0, vm2 5.0 = 3.3 volts, t=25?, pa is constantly biased, 50 ? system. vl adjusted for either 2.4 or 5 ghz operation. 2: 100% production screened. 3: bias current is included in the total quiescent current. 4: vl is set to logic level for device off operation. 5: measured from device on signal turn on, to the point where rf p out stabilizes to 0.5db. 6: load vswr is set to 8:1 and the angle is varied 360 degrees. p out = -30dbm to p1db. 7: no permanent damage with only one parameter set at extreme limit. other parameters set to typical values. 8: not measured in production. 9: p out measured at p in corresponding to power detection threshold. absolute ratings 1 note: 1. no permanent damage with only one parameter set at extreme limit. other parameters set to typical values. p arameter minimum typical maximum minimum typical maximum unit f requency 2.4 2.5 5.15 5.85 ghz supply voltage 3.0 3.3 3.6 3.0 3.3 3.6 v gain 2 24 26 29 24 27.5 31 db t otal quiescent current 2 70 120 150 150 180 225 ma bias current at pin vm 3 13.5 18.0 15.5 ma p1db compression 2 25 26 24 26 dbm current @ p1db comp 2 350 475 400 475 ma standby current 4 0.5 2 ma shutdown current (vm=0v) <1.0 100 ? input return loss 15 14 db output return loss 12 16 db detector output at p1db comp 2.0 3.0 v detector p out threshold 9 7.0 9.0 7.0 9.0 dbm 2 nd harmonic output at p1db -45 -30 dbc 3rd harmonic output at p1db -42 -35 dbc logic shutdown control pin: vl 2.4 vl 5.0 device off 2.0 2.4 0.0 0.8 v device on 0.0 0.8 2.0 2.4 v logic current 10 100 ? turn-on time 5 <1 <1 ? turn-off time <1 <1 ? spurious (stability) 6 -65 -65 dbc symbol parameter value units vc positive supply voltage 5 v ic2.4, ic5.0 supply current ic2.4 ic5.0 820 700 ma ma vm positive bias voltage 4.0 v v l logic voltage 5 v p in rf input power 10 dbm t case case operating temperature -40 to +85 ? t stg storage temperature -55 to +150 ?
?004 fairchild semiconductor corporation RMPA2550 rev. d RMPA2550 backside ground 5.0 ghz pa bias bias detector input match output match detector bias input match output match 2.4 ghz pa functional block diagram pin description 1 vm 2.4 2 dt2 2.4 3 dt1 2.4 (vdet) 4 vc2 2.4 5 n/c 6 rf out 2.4 7 n/c 8 n/c 9 rf out 5.0 10 dt1 5.0 (vdet) 11 vc3 5.0 12 vc2 5.0 13 vm2 5.0 14 vl 5.0 15 vm13 5.0 16 vc1 5.0 17 rf in 5.0 18 vc1 2.4 19 rf in 2.4 20 vl 2.4
?004 fairchild semiconductor corporation RMPA2550 rev. d RMPA2550 performance data 802.11g/a frequency dependency 0 200 400 600 800 1 000 051015 20 25 RMPA2550 detect or volt age vs. modulated pout 2.40 to 2.50 ghz vm, vc=3.3v t=25c data rate 54mbps ofdm 16.7mhz 2.40 ghz 2.45 ghz 2.50 ghz detector voltage (mv) detector voltage (mv) 0 400 800 1 200 1 600 2 000 0510 15 20 25 RMPA2550 detector voltage vs. modulated pout 5.15 to 5. 85 ghz vm, vc=3.3v t=25c data rate 54mbps ofdm 16.7mhz 5.15 ghz 5.25 ghz 5.35 ghz 5.45 ghz 5.55 ghz 5.65 ghz 5.75 ghz 5.85 ghz 0 2 4 6 8 10 0510 15 20 25 rmpa 2550 total measured evm vs. modulated pout 5.15 to 5.85 ghz vm, vc=3.3v t=25c da ta ra te 54mbps ofdm 16.7mhz 5.15 ghz 5.25 ghz 5.35 ghz 5.45 ghz 5.55 ghz 5.65 ghz 5.75 ghz 5.85 ghz includes 0.8% system level evm 0 2 4 6 8 10 0510 15 20 25 rm pa 2 550 total measured evm vs. modulated pout 2.40 to 2.50 ghz vm, vc=3.3v t=25c data rate 54mbps ofdm 16.7mhz 2.40 ghz 2.45 ghz 2.50 ghz modulated power out (dbm) modulated power out (dbm) modulated power out (dbm) modulated power out (dbm) modulated power out (dbm) modulated power out (dbm) includes 0.8% system level evm total measured evm (%) total measured evm (%) 100 150 200 250 300 0510 15 20 25 rmpa 2550 total current vs. modulated pout 2.40 to 2.50 ghz vm, vc=3.3v t=25c data rate 54mbps ofdm 16.7mhz 2.40 ghz 2.45 ghz 2.50 ghz total current (ma) total current (ma) 100 150 200 250 300 051015 20 25 RMPA2550 total current vs. modulated pout 5.15 to 5.85 ghz vm, vc=3.3v t=25c data rate 54m bps ofdm 16.7mhz 5.15 ghz 5.25 ghz 5.35 ghz 5.45 ghz 5.55 ghz 5.65 ghz 5.75 ghz 5.85 ghz
?004 fairchild semiconductor corporation RMPA2550 rev. d RMPA2550 performance data (continued) 802.11g/a frequency dependency (continued) 802.11g/a temperature dependency 20 22 24 26 28 30 0510 15 20 25 RMPA2550 gain vs . modula ted pout 2. 40 to 2.50 ghz vm, vc=3.3v t=25c data rate 54mbps ofdm 16.7mhz 2.40 ghz 2.45 ghz 2.50 ghz gain (db) modulated power out (dbm) modulated power out (dbm) 20 22 24 26 28 30 0510 15 20 25 RMPA2550 gain vs. modulated pout 5.15 to 5.85 ghz vm, vc=3.3v t=25c data ra te 54mbps ofdm 16.7mhz 5.15 ghz 5.25 ghz 5.35 ghz 5.45 ghz 5.55 ghz 5.65 ghz 5.75 ghz 5.85 ghz gain (db) modulated power out (dbm) modulated power out (dbm) modulated power out (dbm) modulated power out (dbm) 0 2 4 6 8 10 0510 15 20 25 RMPA2550 total meas ured evm vs. modulated pout 2.45 ghz vm, vc=3.3v t=-40, +25, +85c data rate 54mbps ofdm 16.7mhz t=-40c t=+25c t=+85c total measured evm (%) total measured evm (%) includes 0.8% system level evm 0 2 4 6 8 10 051015 20 25 RMPA2550 total measured evm vs. modulated pout 5.45 ghz vm, vc=3.3v t=-40, +25, +85c data rate 54mbps ofdm 16.7mhz t=-40c t=+25c t=+85c in cl u des 0.8% system level evm 0 200 400 600 800 1 000 051015 20 25 RMPA2550 detector voltage vs. modulated pout 2.45 ghz vm, vc=3.3v t=-40, +25, +85c data rate 54mbps ofdm 16.7mhz t=- 40c t=+ 25c t=+ 85c detector voltage (mv) detector voltage (mv) 0 400 800 1 200 1 600 2 000 0510 15 20 25 RMPA2550 detector voltage vs. modulated pout 5.45 ghz vm, vc=3.3v t=-40, +25, +85c data rate 54mbps ofdm 16.7mhz t=- 40c t=+ 25c t=+ 85c
?004 fairchild semiconductor corporation RMPA2550 rev. d RMPA2550 performance data (continued) 802.11g/a temperature dependency (continued) 802.11g/a vm dependency 100 150 200 250 300 0510 15 20 25 RMPA2550 tota l current vs. modulated pout 2.45 ghz vm, vc=3.3v t=- 40, +25, +85c data rate 54mbps ofdm 16.7mhz t=- 40c t=+25c t=+85c total current (ma) total current (ma) modulated power out (dbm) modulated power out (dbm) modulated power out (dbm) modulated power out (dbm) 100 150 200 250 300 0510 15 20 25 rm pa 25 50 to tal current vs. modulated pout 5.45 ghz vm, vc=3.3v t= -40, +25, +85c data rate 54mbps ofdm 16.7mhz t=- 40c t=+25c t=+85c 23 24 25 26 27 28 29 30 0510 15 20 25 RMPA2550 gain vs. modulated pout 2.45 gh z vm, vc=3.3v t=-40, +25, +85c data rate 54m bps ofdm 16.7mhz t=-40c t=+25c t=+85c gain (db) 23 24 25 26 27 28 29 30 0510 15 20 25 rm pa 2550 gain vs. modulated pout 5.45 ghz vm, vc=3.3v t=-40, +25, +85c data rate 54mbps ofdm 16.7mhz t=- 40c t=+ 25c t=+ 85c gain (db) modulated power out (dbm) modulated power out (dbm) 0 2 4 6 8 10 0510 15 20 25 RMPA2550 total measured evm vs. modulated pout 2.45 ghz vm=2.7 to 3.3v, vc=3.3v t=25c data rate 54mbps ofdm 16.7mhz vm=2.7v vm=2.8v vm=2.9v vm=3.0v vm=3.1v vm=3.2v vm=3.3v total measurment evm (%) total measurment evm (%) in cludes 0.8% system level evm 0 2 4 6 8 10 0510 15 20 25 RMPA2550 total m easured evm vs. modulated pout 5.45 ghz vm=2.7 to 3.3v, vc=3.3v t=25c data rate 54mbps ofdm 16.7mhz vm=2.7v vm=2.8v vm=2.9v vm=3.0v vm=3.1v vm=3.2v vm=3.3v includes 0.8% sy stem level evm
?004 fairchild semiconductor corporation RMPA2550 rev. d RMPA2550 performance data (continued) 802.11g/a vm dependency (continued) 0 50 100 150 200 250 300 0510 15 20 25 rm pa 2550 total current vs. modulated pout 2.45 ghz vm=2.7 to 3.3v, vc=3.3v t=25c data rate 54mbps ofdm 16.7mhz vm=2.7v vm=2.8v vm=2.9v vm=3.0v vm=3.1v vm=3.2v vm=3.3v 0 50 100 150 200 250 300 0510 15 20 25 RMPA2550 total curren t vs. modulated pout 5.45 ghz vm=2.7 to 3.3v, vc=3.3v t=25c data rate 54mbps ofdm 16.7mhz vm=2.7v vm=2.8v vm=2.9v vm=3.0v vm=3.1v vm=3.2v vm=3.3v 8 10 12 14 16 18 20 5.1 5.2 5. 35.45.55.65.75.85.9 rmpa 2550 modulated pout for 3% total system evm for vm=2.7 to 3.3v, vc=3.3v, t=25c data rate 54mbps ofdm 16.7mhz vm=2.7v vm=2.8v vm=2.9v vm=3.0v vm=3.1v vm=3.2v vm=3.3v 8 10 12 14 16 18 20 2.38 2.4 2.42 2.44 2.46 2.48 2.5 2.52 RMPA2550 modul ated pout for 3% total system evm for vm =2.7 to 3.3v, vc=3.3v, t=25c data rate 54mbps ofdm 16.7mhz vm=2.7v vm=2.8v vm=2.9v vm=3.0v vm=3.1v vm=3.2v vm=3.3v modulated power out (dbm) total current (ma) total current (ma) modulated power out (dbm) frequency (ghz) modulated power out (dbm) vm voltage supply (v) vm voltage supply (v) modulated power out (dbm) frequency (ghz) 0 50 100 150 200 250 2.6 2.7 2. 82.9 3 3.13.23.33.4 RMPA2550 total quiescent bias current vs. vm voltage 5.45 ghz vm, vc=3.3v t=25c data rate 54mbps ofdm 16.7mhz 0 50 100 150 200 250 2.6 2.7 2. 82.9 3 3 .1 3.2 3.3 3.4 RMPA2550 to tal quiescent bias current vs. vm voltage 2.45 ghz vm, vc=3.3v t=25c data rate 54mbps ofdm 16.7mhz total quiescent supply current (ma) total quiescent supply current (ma)
?004 fairchild semiconductor corporation RMPA2550 rev. d RMPA2550 performance data (continued) single tone 23 24 25 26 27 28 29 051015 20 25 30 RMPA2550 single tone gain vs. power out 2.40 to 2.50 ghz vm, vc=3.3v t=25c 2.40 ghz 2.45 ghz 2.50 ghz gain (db) gain (db) single tone power out (dbm) single tone power out (dbm) single tone power out (dbm) single tone power out (dbm) 23 24 25 26 27 28 29 051015 20 25 30 RMPA2550 single tone gain vs. power out 5.15 to 5.85 ghz vm, vc=3.3v t=25c 5.15 ghz 5.25 ghz 5.35 ghz 5.45 ghz 5.55 ghz 5.65 ghz 5.75 ghz 5.85 ghz 23 24 25 26 27 28 29 30 0510 15 20 25 30 RMPA2550 single tone gain vs. power out 2.45 ghz vm, vc=3.3v t=-40, +25, +85c t=-40c t=+25c t=+85c gain (db) 23 24 25 26 27 28 29 30 0510 15 20 25 30 RMPA2550 single tone gain vs. power out 5.45 ghz vm, vc=3.3v t=-40, +25, +85c t=-40c t=+25c t=+85c gain (db) -60 -40 -20 0 20 40 55.25.45.65.86 RMPA2550 s-parameters 5.0 ghz band t=25c vm, vc=3.3v s11 mag s21 mag s22 mag -60 -40 -20 0 20 40 22.22.42.62.83 RMPA2550 s-parameters 2.4 ghz band t=25c vm, vc=3.3v s11 mag s21 mag s22 mag s-parameters (db) s-parameters (db) frequency (ghz) frequency (ghz)
?004 fairchild semiconductor corporation RMPA2550 rev. d RMPA2550 performance data (continued) 802.11g/a/b spectral mask -70 -60 -50 -40 -30 -20 -10 0 2400 2420 2440 2460 2480 2500 rm pa 2550 802.11g spectral mask 2.45 ghz t=25c vm, vc = 3.3v power spectral density (dbr) power spectral density (dbr) power spectral density (dbr) fr equency (mhz) -70 -60 -50 -40 -30 -20 -10 0 5200 5220 5240 5260 5280 5300 rm pa 2550 802.11a spectral mask 5.25 ghz t=25c vm, vc = 3.3v +10dbm pout(dbr) +16dbm pout(dbr) +20dbm pout(dbr) mask (dbr) fr equency (mhz) +10dbm pout(dbr) +16dbm pout(dbr) +20dbm pout(dbr) mask (dbr) -70 -60 -50 -40 -30 -20 -10 0 2400 2420 2440 2460 2480 2500 rm pa 2550 802.11b spectral mask 2.45 ghz t=25c vm,vc =3.3v +1 4dbm pou t(dbr) +1 7dbm pou t(dbr) +2 1dbm pou t(dbr) +2 4dbm pou t(dbr) mask (dbr) fr equency (mhz)
?004 fairchild semiconductor corporation RMPA2550 rev. d RMPA2550 package outline dimensions in inches [mm] detail b detail a front side view bottom view as viewed from bottom
?004 fairchild semiconductor corporation RMPA2550 rev. d RMPA2550 evaluation board schematic evaluation board bill of materials
?004 fairchild semiconductor corporation RMPA2550 rev. d RMPA2550 evaluation board layout actual board size = 2.0" x 1.5" evaluation board turn-on sequence 1 1) connect rf ports to rf test equipment. actual board size = 2.0" x 1.5" = component = jumper/short connection 2) connect common ground terminal to the ground (gnd) pin on the board. 3) connect terminals vc1 5.0, vc2 5.0, vc3 5.0, vc1 2.4, vc2 2.4 together and apply to positive supply (vc=3.3v). 4) connect terminals vm 2.4, vm2 5.0 and vm13 5.0 together and connect to positive supply (vm=3.3v). 5) connect voltmeter to detector output, pin dt1 5.0 and to dt1 2.4. 6) connect logic control pins vl 5.0 and vl 2.4 together and apply 0v. now only the 2.4ghz pa is on. observe the following positive currents flowing into the pins: 7) apply positive voltage of +3.0v to logic control pins vl 5.0 and vl 2.4. now only the 5ghz pa is on. observe the following positive currents flowing into the pins: 8) apply input rf power to sma connector pin rf in 2.4 or rf in 5.0. currents on collector pins will vary depending on the input drive level. recommended turn-off sequence: use reverse order described in the turn-on sequence on the previous page. pin current pin current vl 2.4 <1 na vl 5.0 <1 na vc (total) 2.4 80 ?110 ma vc (total) 5.0 <1 na vm 2.4 12 ?15 ma vm (total) 5.0 <1.9 ma pin current pin current vl 5.0 ~150 ? vl 2.4 <0.25ma vc (total) 5.0 ~184 ma vc (total) 2.4 <1 na vm 5.0 ~16 ma vm 2.4 <0.7ma note: 1. turn on sequence is not critical and it is not necessary to sequence power supplies in actual system level design.
?004 fairchild semiconductor corporation RMPA2550 rev. d RMPA2550 application information precautions to avoid permanent device damage: static sensitivity: follow esd precautions to protect against esd damage: ? properly grounded static-dissipative surface on which to place devices. static-dissipative floor or mat. ? properly grounded conductive wrist strap for each person to wear while handling devices.
disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information preliminary no identification needed obsolete this datasheet contains the design specifications for product development. specifications may change in any manner without notice. this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. formative or in design first production full production not in production isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx? msxpro? ocx? ocxpro? optologic ? optoplanar? pacman? pop? fast ? fastr? fps? frfet? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect? rev. i11 acex? activearray? bottomless? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact? fact quiet series? power247? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? rapidconnect? serdes? silent switcher ? smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic ? tinyopto? trutranslation? uhc? ultrafet ? vcx? across the board. around the world.? the power franchise ? programmable active droop?

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